Researchers at the University of Manchester in the United Kingdom have designed a new type of graphene transistor, in which electrons can use tunneling and thermionic effects to cross barriers from above and below, and exhibit a switching ratio of up to 1 × 106 at room temperature.
It has been difficult to achieve higher switching ratios for graphene transistors. With the high switching ratio and its ability to operate on flexible, transparent substrates, the new transistors can occupy a place in the post-CMOS device era and are expected to achieve faster calculations. speed. Related research was published in the recently published "Nature · Nanotechnology" magazine.
Graphene transistors mostly have a sandwich structure, with atomic thickness graphene as the outer layer, and other ultra-thin materials as the intermediate sandwich layer. These intermediate layers can include a variety of different materials. In this study, scientists used tungsten disulfide (WS2) as an intermediate layer, which can serve as a barrier to the atomic thickness between two graphene interlayers. Compared with other barrier materials, the biggest advantage of tungsten disulfide is that electrons can cross the barrier from above by means of thermionic transport, and can also pass through the barrier from below by tunneling effect. When in the off state, very few electrons can cross the barrier by the above method, but when it is turned on, the electron can choose one way to cross the barrier, and can also choose two ways to achieve a similar effect.
Switching between switches will change the gate voltage of the transistor. The negative gate voltage will form an off state because it will increase the tunneling barrier height, so almost no electrons can cross the barrier. The positive gate voltage can switch the transistor to the on state by reducing the height of the tunneling barrier. At the same time, if the temperature is high enough, the barrier can also be crossed from above by means of thermionic current. In the case of low voltage and low temperature, the tunneling current is linearly related to the voltage. However, when under high voltage, the tunneling current will increase exponentially with the voltage, and then the thermionic current will become the main transmission mechanism.
Using the above characteristics and tungsten disulfide barrier materials, the new transistor has become one of the best graphene transistors with the best performance. In addition, due to the thickness of only a few atomic layers, the new transistor can withstand bending, and it is more likely to be applied to the manufacture of flexible, transparent electronic devices in the future, becoming a powerful candidate for the post-CMOS device era.
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